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| Manufacturer | Fairchild Semiconductor |
|---|---|
| Manufacturer's Part Number | FDD5810_F085 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 72 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 175 Cel; |
| Datasheet | FDD5810_F085 Datasheet |
| In Stock | 7,755 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 7.4 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 72 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .022 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Other Names: |
FDD5810-F085TR FDD5810_F085-ND ONSONSFDD5810-F085 FDD5810_F085 FDD5810_F085DKR-ND FDD5810_F085CT FDD5810_F085DKR FDD5810_F085CT-ND FDD5810_F085TR-ND FDD5810-F085CT 2156-FDD5810-F085-OS FDD5810-F085DKR FDD5810_F085TR |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 37 A |
| Peak Reflow Temperature (C): | 260 |
