Fairchild Semiconductor - FDG6301ND87Z

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FDG6301ND87Z by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDG6301ND87Z
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
Datasheet FDG6301ND87Z Datasheet
In Stock33
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .22 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 4 ohm
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