Fairchild Semiconductor - FDR8521L

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FDR8521L by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDR8521L
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Qualification: Not Qualified; JESD-609 Code: e3;
Datasheet FDR8521L Datasheet
In Stock356
NAME DESCRIPTION
Other Names: FDR8521LTR
FDR8521LCT
FDR8521LDKR
FDR8521L-ND
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.9 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 8
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .07 ohm
Moisture Sensitivity Level (MSL): 1
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