FDZ5047N by Fairchild Semiconductor | Transistors

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Manufacturer	Fairchild Semiconductor
Manufacturer's Part Number	FDZ5047N
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 22 A;
Datasheet	FDZ5047N Datasheet
In Stock	523

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	22 A
Maximum Pulsed Drain Current (IDM):	75 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	36
Maximum Power Dissipation (Abs):	2.8 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	R-PBGA-B36
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0029 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	22 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
523	-	-

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