Fairchild Semiconductor - FGB3440G2_F085

FGB3440G2_F085 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FGB3440G2_F085
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Maximum Rise Time (tr): 7000 ns; Maximum Collector-Emitter Voltage: 390 V;
Datasheet FGB3440G2_F085 Datasheet
In Stock352
NAME DESCRIPTION
Maximum Collector Current (IC): 26.9 A
Maximum Power Dissipation (Abs): 166 W
Maximum Collector-Emitter Voltage: 390 V
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 12 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
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