Fairchild Semiconductor - FGB3440G2_F085

  1. Home
  2. Fairchild Semiconductor - FGB3440G2_F085
FGB3440G2_F085 by Fairchild Semiconductor

Image shown is a representation only.

Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FGB3440G2_F085
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Maximum Rise Time (tr): 7000 ns; Maximum Collector-Emitter Voltage: 390 V;
Datasheet FGB3440G2_F085 Datasheet
In Stock352
NAME DESCRIPTION
Maximum Collector Current (IC): 26.9 A
Maximum Power Dissipation (Abs): 166 W
Maximum Collector-Emitter Voltage: 390 V
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 12 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
352 - -

Popular Products

Category Top Products

2MBI100VA-060-50 by Fuji Electric

2MBI100VA-060-50

Fuji Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 7; Maximum Gate-Emitter Voltage: 20 V;
FS25R12W1T4BOMA1 by Infineon Technologies

FS25R12W1T4BOMA1

Infineon Technologies

FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.
IRGP4266DPBF by Infineon Technologies

IRGP4266DPBF

Infineon Technologies

Infineon's IRGP4266DPBF is an N-CHANNEL IGBT with tr of 90ns and tf of 80ns. It boasts a max power dissipation of 455W, ideal for high-power applications. With Vce(max) at 650V and Ic(max) at 140A, it's suitable for industrial motor drives and renewable energy systems.
APT70GR120J by Microsemi

APT70GR120J

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 112 A; Transistor Application: MOTOR CONTROL;
BSM150GT120DN2 by Infineon Technologies

BSM150GT120DN2

Infineon Technologies

Infineon's BSM150GT120DN2 IGBT offers 1200V VCE, 200A IC, and 1250W power dissipation. Ideal for high-power applications requiring low VCEsat of 3V. Operates up to 150°C making it suitable for industrial and automotive sectors.
APT85GR120JD60 by Microchip Technology

APT85GR120JD60

Microchip Technology

APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.
5SNA3600E170300 by Abb

5SNA3600E170300

Abb

Abb's 5SNA3600E170300 IGBT features N-CHANNEL polarity, 3600A IC, and 1700V VCE. Ideal for power control applications with a complex configuration and fast ton of 835ns.
IHW20N120R5XKSA1 by Infineon Technologies

IHW20N120R5XKSA1

Infineon Technologies

IHW20N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 685ns and a turn-on time of 92ns, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals in a rectangular shape.
IXYN100N120C3 by IXYS Corporation

IXYN100N120C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 152 A; Nominal Turn Off Time (toff): 265 ns;
FGA30T65SHD by Onsemi

FGA30T65SHD

Onsemi

FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.
FGP10N60UNDF by Fairchild Semiconductor

FGP10N60UNDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 139 W; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-PSFM-T3;
IXXX100N60C3H1 by Littelfuse

IXXX100N60C3H1

Littelfuse

The Littelfuse IXXX100N60C3H1 is an N-CHANNEL IGBT with a max VCEsat of 2.2V and IC of 170A, ideal for POWER CONTROL applications. It has a package style of IN-LINE, operating temperature range from -55 to 150 °C, and a turn-off time of 220ns.
FS150R12PT4BOSA1 by Infineon Technologies

FS150R12PT4BOSA1

Infineon Technologies

FS150R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current rating of 200A, and turn off time of 600ns. Ideal for power control applications due to its high operating temperature of 175°C and built-in diode & thermistor.
SGP10N60RUFDTU by Fairchild Semiconductor

SGP10N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;
HGTD1N120BNS9A by Fairchild Semiconductor

HGTD1N120BNS9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Maximum Gate-Emitter Voltage: 20 V;
F475R12KS4B11BOSA1 by Infineon Technologies

F475R12KS4B11BOSA1

Infineon Technologies

F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.
IGW25T120FKSA1 by Infineon Technologies

IGW25T120FKSA1

Infineon Technologies

IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
IRG4PH30KDPBF by International Rectifier

IRG4PH30KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 20 A; No. of Elements: 1;
FF200R12KS4HOSA1 by Infineon Technologies

FF200R12KS4HOSA1

Infineon Technologies

FF200R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 275A, and turn off time of 590ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
FS100R12PT4BOSA1 by Infineon Technologies

FS100R12PT4BOSA1

Infineon Technologies

FS100R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a max voltage of 1200V, current of 135A, and turn off time of 600ns. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities.