Fairchild Semiconductor - QSB363ZR

  1. Home
  2. Fairchild Semiconductor - QSB363ZR
QSB363ZR by Fairchild Semiconductor

Image shown is a representation only.

Manufacturer Fairchild Semiconductor
Manufacturer's Part Number QSB363ZR
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 100 nA;
Datasheet QSB363ZR Datasheet
In Stock5,384
NAME DESCRIPTION
Other Names: QSB363ZR-NDR
QSB363ZRTR
QSB363ZR-ND
QSB363ZRDKR
ONSONSQSB363ZR
QSB363ZRCT
2156-QSB363ZR-OS
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.9 mm
Sub-Category: Photo Transistors
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -25 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.5 mA
Peak Wavelength (nm): 940
Maximum Power Dissipation: .075 W
Additional Features: DAY LIGHT FILTER
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5,384 - -

Popular Products

Category Top Products

HLPT-B5G0-00000 by Broadcom

HLPT-B5G0-00000

Broadcom

PHOTO TRANSISTOR;
SFH3401-2 by Infineon Technologies

SFH3401-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1080;
LS611 by Texas Instruments

LS611

Texas Instruments

LS611 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response times and infrared range detection.
LS616 by Texas Instruments

LS616

Texas Instruments

LS616 by Texas Instruments is a single phototransistor with max temp of 125°C and min temp of -65°C. It has nominal light current of 6mA, response time of 0.000008s, and IR range. Ideal for applications requiring fast response time in temperature-sensitive environments.
BPX84 by Siemens

BPX84

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 4; Maximum Response Time: .000008 s;
TEST2600 by Vishay Intertechnology

TEST2600

Vishay Intertechnology

TEST2600 by Vishay Intertechnology is a single phototransistor with peak wavelength of 920nm. It operates b/w -40°C to 85°C, with max power dissipation of 0.1W. Ideal for applications requiring infrared detection and collector-emitter breakdown voltage of 70V in through hole mounting setups.
QSD124 by Qt Optoelectronics

QSD124

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;
SFH325 by Infineon Technologies

SFH325

Infineon Technologies

SFH325 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has Tin/Lead terminal finish, and can handle max power dissipation of 0.165W. Ideal for applications requiring IR detection in compact spaces due to its small size of 2.4mm and surface mounting feature.
SFH3400-Z by Osram Opto Semiconductors

SFH3400-Z

Osram Opto Semiconductors

The Osram Opto Semiconductors SFH3400-Z is a 2mm square phototransistor with peak wavelength of 850nm. It operates b/w -40°C to 100°C, with collector-emitter breakdown voltage of 20V. Ideal for applications requiring IR detection and 0.063mA light current sensitivity.
SFH300FA3 by Infineon Technologies

SFH300FA3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Peak Wavelength (nm): 900; Maximum Dark Current: 100 nA;
HST9-B170 by Broadcom

HST9-B170

Broadcom

PHOTO TRANSISTOR;
TIL605 by Texas Instruments

TIL605

Texas Instruments

TIL605 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 0.000008s, it's ideal for surface mount applications requiring fast and precise light detection.
TEKT5400S by Telefunken Microelectronics

TEKT5400S

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .15 W;
TPS616(AB,F) by Toshiba

TPS616(AB,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;
TIL412 by Texas Instruments

TIL412

Texas Instruments

TIL412 by Texas Instruments is a PHOTO DARLINGTON phototransistor with max operating temp of 85°C and min of -40°C. It has max dark current of 100nA, response time of 0.001s, and on state current of 0.0001A. Ideal for optoelectronic applications requiring precise light detection in various environments.
SDP8436-003 by Micro Switch

SDP8436-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA;
OP600B by Optek Technology

OP600B

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;
BPX43-3 by Infineon Technologies

BPX43-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 300 nA;
QSE114 by Qt Optoelectronics

QSE114

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
TPS612-C by Toshiba

TPS612-C

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .042 mA; No. of Functions: 1; Shape: ROUND; Maximum Operating Temperature: 75 Cel;