Fairchild Semiconductor - SSP70N10A

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SSP70N10A by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number SSP70N10A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
Datasheet SSP70N10A Datasheet
In Stock950
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 55 A
Maximum Pulsed Drain Current (IDM): 220 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 188 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .023 ohm
Avalanche Energy Rating (EAS): 1613 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 55 A
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