Freescale Semiconductor - A2T23H300-24SR6

  1. Home
  2. Freescale Semiconductor - A2T23H300-24SR6
A2T23H300-24SR6 by Freescale Semiconductor

Image shown is a representation only.

Manufacturer Freescale Semiconductor
Manufacturer's Part Number A2T23H300-24SR6
Description RF Power Field-Effect Transistors;
Datasheet A2T23H300-24SR6 Datasheet
In Stock193
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
193 - -

Popular Products

Category Top Products

BLF6G27-10G by Ampleon Netherlands B V

BLF6G27-10G

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDSO-G2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: GULL WING;
ST16045 by STMicroelectronics

ST16045

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
BLF3G21-30,112 by NXP Semiconductors

BLF3G21-30,112

NXP Semiconductors

NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
SD2942 by STMicroelectronics

SD2942

STMicroelectronics

SD2942 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and can dissipate up to 500 W. Ideal for high-performance RF amplification in compact designs.
AFT09MS015NT1 by NXP Semiconductors

AFT09MS015NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
MRF136 by M/a-com Technology Solutions

MRF136

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
BLF278 by Asi Semiconductor

BLF278

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; No. of Elements: 1;
MRF9180 by Motorola

MRF9180

Motorola

MRF9180 by Motorola is an N-CHANNEL RF Power FET with 2 elements, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE up to 200 °C, with a max power dissipation of 388 W.
934065654112 by NXP Semiconductors

934065654112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Elements: 2; Package Style (Meter): FLANGE MOUNT;
LET9085 by STMicroelectronics

LET9085

STMicroelectronics

LET9085 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This versatile component supports high power dissipation up to 186 W.
934065241118 by NXP Semiconductors

934065241118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Highest Frequency Band: S BAND;
BLF6G22L-40BN,118 by Ampleon Netherlands B V

BLF6G22L-40BN,118

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Reference Standard: IEC-60134; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NPT1012B by M/a-com Technology Solutions

NPT1012B

M/a-com Technology Solutions

NPT1012B by M/a-com is an RF Power FET with a 100V DS breakdown voltage, operating in depletion mode for amplifier applications. It features N-channel configuration, GaN element material, and operates in S band frequency range. The transistor is designed for surface mount with a ceramic-metal sealed co-fired package body ideal for high electron mobility technology.
BLF246B by NXP Semiconductors

BLF246B

NXP Semiconductors

The NXP Semiconductors BLF246B is an RF Power FET with 65V DS breakdown voltage and 14dB min power gain. It operates in the VHF band, has a max drain current of 8A, and a package style of flange mount. Commonly used as an amplifier in very high-frequency applications.
ATF-50189-BLK by Broadcom

ATF-50189-BLK

Broadcom

Broadcom's ATF-50189-BLK is an N-channel RF FET with 7V DS breakdown voltage, 14dB power gain, and operating mode in enhancement. Ideal for C band applications, this transistor has a max drain current of 1A and operates at up to 150°C temperature.
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
BLF647PS,112 by Ampleon Netherlands B V

BLF647PS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: L BAND; Reference Standard: IEC-60134; Package Shape: RECTANGULAR;
SD2931-10 by STMicroelectronics

SD2931-10

STMicroelectronics

SD2931-10 by STMicroelectronics is an N-channel RF Power FET with a 125V DS breakdown voltage and 20A max drain current. Ideal for UHF applications, it operates in enhancement mode with a max power dissipation of 389W. The transistor features a plastic/epoxy package body, flat terminals, and nickel palladium gold finish.
PD55035 by STMicroelectronics

PD55035

STMicroelectronics

PD55035 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8.5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance in demanding environments.
MRF8S9200NR3 by Freescale Semiconductor

MRF8S9200NR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Additional Features: ESD PROTECTED; JESD-30 Code: R-CDFP-F2;