Freescale Semiconductor - MRF7P20040HSR3

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MRF7P20040HSR3 by Freescale Semiconductor

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Manufacturer Freescale Semiconductor
Manufacturer's Part Number MRF7P20040HSR3
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
Datasheet MRF7P20040HSR3 Datasheet
In Stock16,093
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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