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Manufacturer | Gan Systems |
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Manufacturer's Part Number | GS61008T-MR |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 3; Operating Mode: ENHANCEMENT MODE; |
Datasheet | GS61008T-MR Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM NITRIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 90 A |
Surface Mount: | YES |
Terminal Finish: | GOLD OVER NICKEL |
No. of Terminals: | 4 |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-PBCC-N4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
Case Connection: | SOURCE |
Moisture Sensitivity Level (MSL): | 3 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Peak Reflow Temperature (C): | 260 |