STMicroelectronics - LET9002

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LET9002 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number LET9002
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4 W; Additional Features: HIGH RELIABILITY; Transistor Element Material: SILICON;
Datasheet LET9002 Datasheet
In Stock4,329
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 4 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 4 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-PQCC-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): .25 A
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