Image shown is a representation only.
| Manufacturer | New Jersey Semiconductor Products |
|---|---|
| Manufacturer's Part Number | BLF861A |
| Description | N-CHANNEL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; No. of Elements: 2; |
| Datasheet | BLF861A Datasheet |
| In Stock | 1,510 |
| NAME | DESCRIPTION |
|---|---|
| Minimum DS Breakdown Voltage: | 65 V |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 2 |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Drain Current (ID): | 18 A |
| Polarity or Channel Type: | N-CHANNEL |









