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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MRFE6VP5150NR1 |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT; |
| Datasheet | MRFE6VP5150NR1 Datasheet |
| In Stock | 292 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | COMMON SOURCE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| JEDEC-95 Code: | TO-270 |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 133 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PDFM-F4 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 3 |
