NXP Semiconductors - A3T09S100NR1

  1. Home
  2. NXP Semiconductors - A3T09S100NR1
A3T09S100NR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A3T09S100NR1
Description RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet A3T09S100NR1 Datasheet
In Stock361
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
361 - -

Popular Products

Category Top Products

PD84010STR-E by STMicroelectronics

PD84010STR-E

STMicroelectronics

PD84010STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
934061526112 by NXP Semiconductors

934061526112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 60 V;
VRF151G by Microchip Technology

VRF151G

Microchip Technology

VRF151G by Microchip Technology is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, 40A Max Drain Current, and 500W Max Power Dissipation. Commonly used in amplifier applications for Very High Frequency Band operations due to its ceramic-metal sealed co-fired package and dual terminal position.
MRF151A by M/a-com Technology Solutions

MRF151A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Maximum Drain Current (ID): 16 A;
AFT27S010NT1 by NXP Semiconductors

AFT27S010NT1

NXP Semiconductors

NXP Semiconductors' AFT27S010NT1 is an N-CHANNEL RF Power FET with SINGLE configuration. It operates at a max temperature of 150°C and can withstand peak reflow temperature of 260°C. Ideal for surface mount applications in various electronic devices.
SD3933 by STMicroelectronics

SD3933

STMicroelectronics

SD3933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and can dissipate up to 648 W. Ideal for high-performance RF amplifiers, it operates efficiently in enhancement mode.
PTFA091201EV4R250XTMA1 by Infineon Technologies

PTFA091201EV4R250XTMA1

Infineon Technologies

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PTVA101K02EVV1XWSA1 by Infineon Technologies

PTVA101K02EVV1XWSA1

Infineon Technologies

Infineon's PTVA101K02EVV1XWSA1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage. It features COMMON SOURCE configuration, suitable for AMPLIFIER applications in L BAND frequency range. This METAL-OXIDE SEMICONDUCTOR FET operates at up to 225°C and comes in a FLANGE MOUNT package style.
MRF101AN by NXP Semiconductors

MRF101AN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD54008TR-E by STMicroelectronics

PD54008TR-E

STMicroelectronics

PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
PD57045S by STMicroelectronics

PD57045S

STMicroelectronics

STMicroelectronics PD57045S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, operates in ENHANCEMENT MODE, and can withstand temperatures up to 165 °C.
934064686118 by NXP Semiconductors

934064686118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
STAP85050 by STMicroelectronics

STAP85050

STMicroelectronics

STAP85050 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 16 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
TSD2900 by STMicroelectronics

TSD2900

STMicroelectronics

TSD2900 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. Featuring a 1.25A Max Drain Current and METAL-OXIDE SEMICONDUCTOR technology, it can withstand temperatures up to 200 °C.
BLP10H605AZ by Ampleon Netherlands B V

BLP10H605AZ

Ampleon Netherlands B V

BLP10H605AZ by Ampleon Netherlands BV is a plastic/epoxy RF power FET with N-channel configuration. It operates in enhancement mode and has a min DS breakdown voltage of 104V. This transistor is commonly used as an amplifier in the L band frequency range.
MRF141G by Motorola

MRF141G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Power Dissipation Ambient: 500 W; Operating Mode: ENHANCEMENT MODE;
MMRF5014HR5 by Freescale Semiconductor

MMRF5014HR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 17 dB; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
TIM3742-8UL by Toshiba

TIM3742-8UL

Toshiba

Toshiba's TIM3742-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a single configuration, it has a max drain current of 7A and operates in depletion mode. With a package style of flange mount and metal-oxide semiconductor technology, it offers high power dissipation up to 37.5W at a max temp of 175°C.
GS61008T-MR by Gan Systems

GS61008T-MR

Gan Systems

GS61008T-MR by Gan Systems is an N-CHANNEL RF FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for SWITCHING applications at 100V DS Breakdown Voltage. With GALLIUM NITRIDE technology, it handles up to 90A ID and supports VERY HIGH FREQUENCY BAND operations.
FLL57MK by Eudyna Devices

FLL57MK

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND; Operating Mode: DEPLETION MODE;