RD00HHS1-101 by Mitsubishi Electric | Transistors

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Manufacturer	Mitsubishi Electric
Manufacturer's Part Number	RD00HHS1-101
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
Datasheet	RD00HHS1-101 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	3.1 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.2 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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