Hamamatsu Photonics Kk - S2386-5K

  1. Home
  2. Hamamatsu Photonics Kk - S2386-5K
S2386-5K by Hamamatsu Photonics Kk

Image shown is a representation only.

Manufacturer Hamamatsu Photonics Kk
Manufacturer's Part Number S2386-5K
Description AVALANCHE PHOTODIODE; Mounting Feature: RADIAL MOUNT; Maximum Reverse Voltage: 30 V; Maximum Dark Current: .005 nA; Infrared (IR) Range: YES; Shape: SQUARE;
Datasheet S2386-5K Datasheet
NAME DESCRIPTION
Maximum Dark Current: .005 nA
Shape: SQUARE
Configuration: SINGLE
Size: 2.4 mm
Sub-Category: Photo Diodes
Minimum Operating Temperature: -40 Cel
Mounting Feature: RADIAL MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: AVALANCHE PHOTODIODE
Nominal Light Current: .006 mA
Peak Wavelength (nm): 960
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Reverse Voltage: 30 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ARRAYRDM-0116A10-DFN-TR1 by Onsemi

ARRAYRDM-0116A10-DFN-TR1

Onsemi

AVALANCHE PHOTODIODE;
BPW34B by Infineon Technologies

BPW34B

Infineon Technologies

Infineon's BPW34B is a PIN photodiode with max. operating temp of 80°C and min. temp of -40°C. It has a max. dark current of 2nA, response time of 0.00000035s, and reverse voltage of 32V. Ideal for optoelectronic applications requiring precise light detection in various environments due to its silicon semiconductor material and through-hole mounting feature.
SFH206F by Infineon Technologies

SFH206F

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000002 s; Minimum Operating Temperature: -55 Cel; Infrared (IR) Range: YES;
TEMD5510FX01 by Vishay Intertechnology

TEMD5510FX01

Vishay Intertechnology

The Vishay Intertechnology TEMD5510FX01 is a single PIN photodiode with peak wavelength of 540nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 16V. Ideal for surface mount applications requiring a rectangular photodiode measuring 4.4mm in size.
BPW33S by Infineon Technologies

BPW33S

Infineon Technologies

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; JESD-609 Code: e0; Maximum Response Time: .0000015 s;
MICROFC-10035-SMT-TR by Onsemi

MICROFC-10035-SMT-TR

Onsemi

MICROFC-10035-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85 °C, has reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for surface mount applications in optoelectronics for high sensitivity light detection.
SFH2224 by Infineon Technologies

SFH2224

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 10 nA; Maximum Response Time: .0000000005 s; Maximum Reverse Voltage: 20 V;
MICROFC-30020-SMT-TR1 by Onsemi

MICROFC-30020-SMT-TR1

Onsemi

MICROFC-30020-SMT-TR1 by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 142nA. Ideal for optoelectronic applications requiring surface mount configuration.
SFH872/F272 by Infineon Technologies

SFH872/F272

Infineon Technologies

Photo Diodes; Shape: SQUARE; No. of Functions: 1; Configuration: SINGLE; Size: 20 mm;
BPW34BS by Infineon Technologies

BPW34BS

Infineon Technologies

BPW34BS by Infineon Technologies is a single PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 85°C, with reverse breakdown voltage of 32V. Ideal for infrared applications, it has a square shape and surface mount feature.
NR8501FP-BC by Renesas Electronics

NR8501FP-BC

Renesas Electronics

Photo Diodes;
KOM2033BF by Infineon Technologies

KOM2033BF

Infineon Technologies

Photo Diodes; Maximum Dark Current: .001 nA; No. of Functions: 6; Configuration: SEPARATE, 6 ELEMENTS; Nominal Light Current: .008 mA; Size: 2.5 mm;
HSDL-5400-OPTION-011 by Broadcom

HSDL-5400-OPTION-011

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Maximum Dark Current: 5 nA; Infrared (IR) Range: YES; Size: 1.53 mm; Minimum Reverse Breakdown Voltage: 40 V;
HSDL-5420#021 by Agilent Technologies

HSDL-5420#021

Agilent Technologies

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .0016 mA; Maximum Reverse Voltage: 40 V; Minimum Reverse Breakdown Voltage: 40 V;
HP-3F by Kodenshi

HP-3F

Kodenshi

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Semiconductor Material: Silicon; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 70 Cel;
BPW24R by Vishay Telefunken

BPW24R

Vishay Telefunken

PIN PHOTODIODE; Size: .78 mm; Shape: ROUND; Nominal Light Current: .055 mA; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 125 Cel;
BPW50 by Diodes Incorporated

BPW50

Diodes Incorporated

PIN PHOTODIODE; Terminal Finish: TIN LEAD; No. of Functions: 1; Nominal Light Current: .02 mA; Infrared (IR) Range: YES; Minimum Reverse Breakdown Voltage: 32 V;
NR4210TK-AZ by Renesas Electronics

NR4210TK-AZ

Renesas Electronics

Photo Diodes;
MICROFR-10020-MLP-TA by Onsemi

MICROFR-10020-MLP-TA

Onsemi

MICROFR-10020-MLP-TA by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 25nA. Ideal for surface mount applications in optoelectronics.
SFH221S by Infineon Technologies

SFH221S

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .015 mA; No. of Functions: 2; Maximum Dark Current: 100 nA;