Renesas Electronics - NR8501FR-BB

  1. Home
  2. Renesas Electronics - NR8501FR-BB
NR8501FR-BB by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NR8501FR-BB
Description Photo Diodes;
Datasheet NR8501FR-BB Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SFH250V by Osram Opto Semiconductors

SFH250V

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 100 Cel; Semiconductor Material: Silicon; Maximum Reverse Voltage: 30 V;
SFH2430-Z by Osram Opto Semiconductors

SFH2430-Z

Osram Opto Semiconductors

AVALANCHE PHOTODIODE; Terminal Finish: TIN; JESD-609 Code: e3;
ASDL-5270-D31 by Broadcom

ASDL-5270-D31

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
TEFD4300F by Vishay Semiconductors

TEFD4300F

Vishay Semiconductors

PIN PHOTODIODE; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .027 mA; Minimum Reverse Breakdown Voltage: 60 V; Maximum Operating Temperature: 100 Cel;
BPW34FSR by Osram Opto Semiconductors

BPW34FSR

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FSR is a single PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 16V. Ideal for infrared applications, it has fast response time of 0.00000002s and surface mount feature.
SFH248F by Infineon Technologies

SFH248F

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000005 s; Maximum Reverse Voltage: 10 V; Maximum Operating Temperature: 80 Cel;
BPW41 by Diodes Incorporated

BPW41

Diodes Incorporated

PIN PHOTODIODE; Infrared (IR) Range: YES; Maximum Dark Current: 30 nA; Nominal Light Current: .025 mA; Shape: RECTANGULAR; Peak Wavelength (nm): 925;
MICROFC-SMTPA-30050-GEVB-TR1 by Onsemi

MICROFC-SMTPA-30050-GEVB-TR1

Onsemi

AVALANCHE PHOTODIODE;
HSDL-5420 by Broadcom

HSDL-5420

Broadcom

PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Nominal Light Current: .0043 mA; Minimum Reverse Breakdown Voltage: 40 V; Maximum Dark Current: 5 nA;
BPV10NF by Telefunken Microelectronics

BPV10NF

Telefunken Microelectronics

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 60 V; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .0000000025 s;
AFBR-S4N33C013 by Broadcom

AFBR-S4N33C013

Broadcom

AVALANCHE PHOTODIODE;
BPY12H1 by Infineon Technologies

BPY12H1

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000002 s; Maximum Dark Current: 100 nA;
SFH2505-Z by Osram Opto Semiconductors

SFH2505-Z

Osram Opto Semiconductors

Photo Diodes;
BPW34 by Infineon Technologies

BPW34

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 2 nA; Semiconductor Material: Silicon; Maximum Response Time: .00000035 s; Maximum Operating Temperature: 80 Cel;
NDL5406C by Renesas Electronics

NDL5406C

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000000004 s; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 7 nA;
MICROFC-10010-SMT by Onsemi

MICROFC-10010-SMT

Onsemi

MICROFC-10010-SMT by Onsemi is a 1mm rectangular avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for optoelectronic applications requiring surface mount configuration.
NDL5171P2 by Renesas Electronics

NDL5171P2

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium; Maximum Reverse Voltage: 48 V; Minimum Operating Temperature: -40 Cel;
BPX-65 by Laser Components

BPX-65

Laser Components

BPX-65 by Laser Components is a 4.7mm PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 125°C, with max dark current of 5nA. Ideal for IR applications, it has fast response time of 0.00000003s and can handle up to 50V reverse voltage.
SFH205FA by Infineon Technologies

SFH205FA

Infineon Technologies

Infineon's SFH205FA is a PIN photodiode with max response time of 0.00000002s and max reverse voltage of 32V. Operating temp range from -55 to 80°C makes it ideal for optoelectronic applications requiring precise light detection in various environments. Its through-hole mounting feature simplifies installation in electronic devices.
2606B by Ortel

2606B

Ortel

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs;