Osram Opto Semiconductors - BP104FS

  1. Home
  2. Osram Opto Semiconductors - BP104FS
BP104FS by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number BP104FS
Description PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: TIN NICKEL; Additional Features: AEC-Q101; Configuration: SINGLE; Minimum Reverse Breakdown Voltage: 20 V;
Datasheet BP104FS Datasheet
In Stock30,831
NAME DESCRIPTION
Other Names: 475-1069-2-ND
4991-BP104FSDKR
475-1069-1-ND
4991-BP104FSCT
4991-BP104FSCT-ND
475-BP104FSCT
475-1069-1
475-1069-2
4991-BP104FSTR
4991-BP104FSTR-ND
475-BP104FSTR
4991-BP104FSDKR-ND
475-BP104FSDKR
475-1069-6
475-1069-6-ND
Q62702P1646
Maximum Dark Current: 30 nA
Shape: SQUARE
Configuration: SINGLE
Size: 2.2 mm
Sub-Category: Photo Diodes
Minimum Reverse Breakdown Voltage: 20 V
Terminal Finish: TIN NICKEL
JESD-609 Code: e2
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Nominal Light Current: .025 mA
Peak Wavelength (nm): 950
Additional Features: AEC-Q101
Maximum Response Time: .00000002 s
Maximum Operating Temperature: 100 Cel
Maximum Reverse Voltage: 20 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
30,831 - -

Popular Products

Category Top Products

HR1104TG by Renesas Electronics

HR1104TG

Renesas Electronics

PIN PHOTODIODE; Configuration: SINGLE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 1000; No. of Functions: 1; Size: 2 mm;
PH315 by Renesas Electronics

PH315

Renesas Electronics

Photo Diodes;
PH309 by Renesas Electronics

PH309

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000012 s; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 80 Cel;
NDL5471RD by Renesas Electronics

NDL5471RD

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 1 nA;
MICROFJ-SMTPA-30035-GEVB by Onsemi

MICROFJ-SMTPA-30035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
TIED84 by Texas Instruments

TIED84

Texas Instruments

TIED84 by Texas Instruments is an avalanche photodiode with max operating temp of 125°C and min of -60°C. It has a max dark current of 0.15nA, reverse voltage of 120V, made from silicon. Ideal for optoelectronic applications requiring high sensitivity in extreme temperature conditions.
SFH2201 by Osram Opto Semiconductors

SFH2201

Osram Opto Semiconductors

PIN PHOTODIODE;
MICROFR-10050-MLP-TR by Onsemi

MICROFR-10050-MLP-TR

Onsemi

MICROFR-10050-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.25V, and max dark current of 146nA. Ideal for surface mount applications in optoelectronics.
VBPW34FASR by Vishay Intertechnology

VBPW34FASR

Vishay Intertechnology

PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
BPX91B by Infineon Technologies

BPX91B

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Shape: RECTANGULAR; Peak Wavelength (nm): 850; No. of Functions: 1; Semiconductor Material: Silicon;
BPW34FAS-Z by Osram Opto Semiconductors

BPW34FAS-Z

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FAS-Z is a PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 16V. Sized at 2.65mm, it's ideal for infrared applications due to its low dark current and nominal light current of 0.023mA.
BPX60 by Infineon Technologies

BPX60

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000003 s; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;
SFH520A by Infineon Technologies

SFH520A

Infineon Technologies

Photo Diodes; Maximum Dark Current: 20 nA; Minimum Reverse Breakdown Voltage: 180 V; Size: 5 mm; Shape: SQUARE; No. of Functions: 1;
MICRORB-SMA-10035-GEVB-PK by Onsemi

MICRORB-SMA-10035-GEVB-PK

Onsemi

Photo Diodes;
VEMD5510C by Vishay Intertechnology

VEMD5510C

Vishay Intertechnology

PIN PHOTODIODE;
BPY12H1 by Infineon Technologies

BPY12H1

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000002 s; Maximum Dark Current: 100 nA;
SFH221 by Siemens

SFH221

Siemens

Photo Diodes; Size: 5.9 mm; Nominal Light Current: .015 mA; Maximum Dark Current: 100 nA; Configuration: COMMON CATHODE, 2 ELEMENTS; Shape: ROUND;
SFH203P by Osram Opto Semiconductors

SFH203P

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN NICKEL; Size: 1 mm; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel;
NOP04811CLTAG by Onsemi

NOP04811CLTAG

Onsemi

Photo Diodes; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
MICROFJ-30035-TSV by Onsemi

MICROFJ-30035-TSV

Onsemi

AVALANCHE PHOTODIODE;