Renesas Electronics - HR1104TG

  1. Home
  2. Renesas Electronics - HR1104TG
HR1104TG by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HR1104TG
Description PIN PHOTODIODE; Configuration: SINGLE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 1000; No. of Functions: 1; Size: 2 mm;
Datasheet HR1104TG Datasheet
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: YES
Maximum Dark Current: 30 nA
Optoelectronic Type: PIN PHOTODIODE
Shape: ROUND
Configuration: SINGLE
Size: 2 mm
Peak Wavelength (nm): 1000
Maximum Operating Temperature: 85 Cel
Minimum Reverse Breakdown Voltage: 20 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

KOM2108 by Infineon Technologies

KOM2108

Infineon Technologies

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0; Maximum Operating Temperature: 80 Cel;
KOM2085 by Infineon Technologies

KOM2085

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 920; Nominal Light Current: .17 mA; Infrared (IR) Range: YES;
RPMD-0132 by ROHM

RPMD-0132

ROHM

PIN PHOTODIODE;
SFH221 by Siemens

SFH221

Siemens

Photo Diodes; Size: 5.9 mm; Nominal Light Current: .015 mA; Maximum Dark Current: 100 nA; Configuration: COMMON CATHODE, 2 ELEMENTS; Shape: ROUND;
PD95-21B/TR10 by Everlight Electronics

PD95-21B/TR10

Everlight Electronics

Everlight Electronics' PD95-21B/TR10 is a 1.9mm PIN photodiode with peak wavelength of 940nm. Operating temperature ranges from -25 to 85°C, with reverse breakdown voltage of 32V. Ideal for IR applications, it features surface mounting and max dark current of 10nA.
SFH206 by Infineon Technologies

SFH206

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000035 s; JESD-609 Code: e0; Semiconductor Material: Silicon;
SFH229P by Infineon Technologies

SFH229P

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000001 s; Nominal Light Current: .003 mA; JESD-609 Code: e0;
BPV10 by Temic Semiconductors

BPV10

Temic Semiconductors

PIN PHOTODIODE; No. of Functions: 1; Configuration: SINGLE; Peak Wavelength (nm): 920; Infrared (IR) Range: YES; Size: 5 mm;
NDL5105P1 by Renesas Electronics

NDL5105P1

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium;
NDL5131P1C by Renesas Electronics

NDL5131P1C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA;
MICROFR-10035-MLP-TR by Onsemi

MICROFR-10035-MLP-TR

Onsemi

MICROFR-10035-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 81nA. This square-shaped photodiode in a surface mount package is ideal for optoelectronic applications requiring precise light detection.
BP104 by Telefunken Microelectronics

BP104

Telefunken Microelectronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 20 V; Maximum Dark Current: 2 nA; Semiconductor Material: Silicon; Minimum Operating Temperature: -40 Cel;
NDL5103P by Renesas Electronics

NDL5103P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Germanium; Maximum Dark Current: 300 nA; Maximum Reverse Voltage: 40 V; Minimum Operating Temperature: -30 Cel;
BP104 by Siemens

BP104

Siemens

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .025 mA; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000125 s; Maximum Reverse Voltage: 20 V;
SFH250F by Infineon Technologies

SFH250F

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000001 s; Maximum Dark Current: 10 nA; Maximum Reverse Voltage: 30 V;
NR8800FS-BB-AZ by Renesas Electronics

NR8800FS-BB-AZ

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 30 nA;
PDB-C201 by Advanced Photonix

PDB-C201

Advanced Photonix

Photo Diodes;
MICROFC-SMTPA-30020-GEVB by Onsemi

MICROFC-SMTPA-30020-GEVB

Onsemi

AVALANCHE PHOTODIODE;
AFBR-S4N44P044M by Broadcom

AFBR-S4N44P044M

Broadcom

AVALANCHE PHOTODIODE;
HP3F by Handok

HP3F

Handok

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Maximum Operating Temperature: 70 Cel; JESD-609 Code: e0;