Harris Semiconductor - HGTG11N120CND

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HGTG11N120CND by Harris Semiconductor

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Manufacturer Harris Semiconductor
Manufacturer's Part Number HGTG11N120CND
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
Datasheet HGTG11N120CND Datasheet
In Stock569
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 11 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: LOW CONDUCTION LOSS
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