Honeywell Sensing And Control - SMD2440-001

  1. Home
  2. Honeywell Sensing And Control - SMD2440-001
SMD2440-001 by Honeywell Sensing And Control

Image shown is a representation only.

Manufacturer Honeywell Sensing And Control
Manufacturer's Part Number SMD2440-001
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; No. of Functions: 1; Nominal Light Current: 1.5 mA; Shape: ROUND;
Datasheet SMD2440-001 Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Sub-Category: Photo Transistors
Minimum Operating Temperature: -55 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.5 mA
Peak Wavelength (nm): 880
Maximum Power Dissipation: .125 W
Maximum Operating Temperature: 125 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

LS614 by Texas Instruments

LS614

Texas Instruments

LS614 by Texas Instruments is a single configuration phototransistor with a round shape. It operates in temperatures ranging from -65°C to 125°C and has a max power dissipation of 0.05W. With nominal light current of 4mA, it is ideal for applications requiring fast response times such as infrared sensing in electronic devices.
TEMT1020 by Vishay Telefunken

TEMT1020

Vishay Telefunken

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum Dark Current: 200 nA; Maximum Response Time: .000002 s;
SFH303-4 by Infineon Technologies

SFH303-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 5 mm; Peak Wavelength (nm): 850; Maximum Power Dissipation: .2 W;
BPT-BP1A34 by Yellow Stone

BPT-BP1A34

Yellow Stone

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
SPS203C by Onsemi

SPS203C

Onsemi

SPS203C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 100°C, dissipating max power of 0.05W. With response time of 0.00003s and max on state current of 0.05A, it's ideal for through hole mounting in various optoelectronic applications.
PT42-21B/TR8 by Everlight Electronics

PT42-21B/TR8

Everlight Electronics

PT42-21B/TR8 by Everlight Electronics is a 1.8mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 3mA.
BPX43-2 by Infineon Technologies

BPX43-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .33 W; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;
SFH320-3 by Infineon Technologies

SFH320-3

Infineon Technologies

SFH320-3 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, dissipating max power of 0.165W. Ideal for applications requiring fast response time and low dark current in IR range.
BPW77NA by Telefunken Microelectronics

BPW77NA

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 10 nA; Peak Wavelength (nm): 800;
SFH302-5 by Infineon Technologies

SFH302-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 880; JESD-609 Code: e0;
TEST2600 by Vishay Telefunken

TEST2600

Vishay Telefunken

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN SILVER; Nominal Light Current: 2.5 mA; Infrared (IR) Range: YES; No. of Functions: 1;
OP802WSL by Optek Technology

OP802WSL

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Shape: ROUND; Size: 4.65 mm; Infrared (IR) Range: YES;
SFH317-3 by Infineon Technologies

SFH317-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;
PT480FE0000F by Sharp Corporation

PT480FE0000F

Sharp Corporation

Sharp Corporation's PT480FE0000F is a 1.6mm PHOTO TRANSISTOR with peak wavelength of 860nm. It operates b/w -25°C to 85°C, with collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current of 0.8mA with low dark current at 100nA.
TIL608 by Texas Instruments

TIL608

Texas Instruments

TIL608 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 8μs and dark current of 25nA, it's ideal for surface mount applications in various industries.
BPX86 by Infineon Technologies

BPX86

Infineon Technologies

BPX86 by Infineon Technologies is a phototransistor with max operating temp of 85°C and min operating temp of -40°C. It has a max dark current of 200nA and response time of 0.000008s. Ideal for applications requiring through hole mounting, such as light sensing in various electronic devices.
VEMT2000X01 by Vishay Intertechnology

VEMT2000X01

Vishay Intertechnology

Vishay Intertechnology's VEMT2000X01 is a 1.8mm round phototransistor with peak wavelength of 860nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W and on-state current of 0.05A. Ideal for IR applications due to its infrared range, it is surface mountable and has a min collector-emitter breakdown voltage of 20V.
SFH309FA-5/6 by Osram Opto Semiconductors

SFH309FA-5/6

Osram Opto Semiconductors

Osram Opto SFH309FA-5/6 is a single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, with max power dissipation of 0.165W. Ideal for applications requiring IR detection and collector-emitter breakdown voltage of 35V.
TPS601A-A by Toshiba

TPS601A-A

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 4.7 mm; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
PH102 by Renesas Electronics

PH102

Renesas Electronics

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Additional Features: HIGH SENSITIVITY; Nominal Light Current: .18 mA; Size: 3.8 mm;