Infineon Technologies - 27-31GHZHPA

  1. Home
  2. Infineon Technologies - 27-31GHZHPA
27-31GHZHPA by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number 27-31GHZHPA
Description WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 27000 MHz; Maximum Operating Frequency: 31000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
Datasheet 27-31GHZHPA Datasheet
In Stock398
NAME DESCRIPTION
Construction: COMPONENT
Minimum Operating Frequency: 27000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 31000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
398 - -

Popular Products

Category Top Products

MGA-72543BLK by Agilent Technologies

MGA-72543BLK

Agilent Technologies

Agilent Technologies' MGA-72543BLK is a wide band low power RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, making it ideal for RF and microwave applications requiring high frequency amplification in a compact form factor.
HMC517LC4 by Analog Devices

HMC517LC4

Analog Devices

Analog Devices' HMC517LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 17-26 GHz. It has a max input power of 2 dBm and operates on a 3V supply. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
SBF-4089Z by Sirenza Microdevices

SBF-4089Z

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
MGA-72543-TR1 by Agilent Technologies

MGA-72543-TR1

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;
HMC409LP4ETR by Hittite Microwave

HMC409LP4ETR

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;
TGA4521 by Triquint Semiconductor

TGA4521

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;
HMC506LP4ETR by Analog Devices

HMC506LP4ETR

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
TQP3M9037 by Qorvo

TQP3M9037

Qorvo

TQP3M9037 by Qorvo is a wide band medium power RF amplifier with 18.5 dB gain, operating from 700 MHz to 6000 MHz. It has a max input power of 22 dBm and operates at temperatures ranging from -40°C to 105°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
MAX2659ELT+T by Maxim Integrated

MAX2659ELT+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Temperature: -40 Cel;
CMPA801B030S by Wolfspeed

CMPA801B030S

Wolfspeed

WIDE BAND HIGH POWER;
MAX2839ETN+ by Maxim Integrated

MAX2839ETN+

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
HMC994ALP5ETR by Analog Devices

HMC994ALP5ETR

Analog Devices

WIDE BAND MEDIUM POWER;
SMA70-2 by M/a-com

SMA70-2

M/a-com

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;
SGA3363Z by Qorvo

SGA3363Z

Qorvo

SGA3363Z by Qorvo is a RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wide band low power applications, this component features a plastic/epoxy package and requires a 2.6V power supply.
HMC462 by Analog Devices

HMC462

Analog Devices

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.
HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.
LEE-29 by Mini-circuits

LEE-29

Mini-circuits

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.
MW7IC930NR1 by Freescale Semiconductor

MW7IC930NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;
ABA-54563-BLKG by Broadcom

ABA-54563-BLKG

Broadcom

Broadcom's ABA-54563-BLKG is a wide band low power RF amplifier with 21 dB gain, operating from 0 to 3400 MHz. It has a max input power of 20 dBm and VSWR of 1.2, suitable for surface mount applications in RF & microwave systems. The component features a characteristic impedance of 50 ohms and operates at 5V with a max supply current of 90 mA.