Infineon Technologies - 29MT050XHPBF

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29MT050XHPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 29MT050XHPBF
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Form: PIN/PEG; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
Datasheet 29MT050XHPBF Datasheet
In Stock51
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 920 mJ
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 46 A
Maximum Pulsed Drain Current (IDM): 180 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 12
Minimum DS Breakdown Voltage: 500 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-P12
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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