Infineon Technologies - 2N7617UC

  1. Home
  2. Infineon Technologies - 2N7617UC
2N7617UC by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number 2N7617UC
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
Datasheet 2N7617UC Datasheet
In Stock491
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .89 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .75 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
491 - -

Popular Products

Category Top Products

2N7002 by Calogic

2N7002

Calogic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
2N7002W by Panjit International

2N7002W

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
DMP6023LFG-7 by Diodes Incorporated

DMP6023LFG-7

Diodes Incorporated

DMP6023LFG-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation.
FDC8602 by Fairchild Semiconductor

FDC8602

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: MO-193AA;
IRFD110PBF by Vishay Siliconix

IRFD110PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
BSS138K by Fairchild Semiconductor

BSS138K

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-236AB; Package Body Material: PLASTIC/EPOXY;
NX3008PBK,215 by NXP Semiconductors

NX3008PBK,215

NXP Semiconductors

NX3008PBK,215 by NXP Semiconductors is a P-CHANNEL FET with max drain current of 0.23A and power dissipation of 0.42W. Ideal for applications requiring surface mount technology, it operates at up to 150°C making it suitable for various electronic devices.
ZXM61N02FTA by Diodes Incorporated

ZXM61N02FTA

Diodes Incorporated

ZXM61N02FTA by Diodes Inc. is a N-CHANNEL FET with 20V DS breakdown voltage, 1.7A max drain current, and 0.18 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and small outline package style. Operating in enhancement mode, it can handle up to 150°C temperature making it suitable for various electronic devices.
SI2309CDS-T1-GE3 by Vishay Intertechnology

SI2309CDS-T1-GE3

Vishay Intertechnology

SI2309CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 1.6A Drain Current, and 0.345 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.7W and operates b/w -55 to 150 °C temperature range.
BSL308PEH6327XTSA1 by Infineon Technologies

BSL308PEH6327XTSA1

Infineon Technologies

BSL308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for applications requiring high drain current up to 2A, low on-resistance of 0.08 ohm, and AEC-Q101 compliance.
BSS84AKM,315 by NXP Semiconductors

BSS84AKM,315

NXP Semiconductors

NXP Semiconductors' BSS84AKM,315 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a chip carrier package style. Operating at up to 150°C, it has an 8.5 ohm max drain-source on resistance.
MMBF170LT1 by Onsemi

MMBF170LT1

Onsemi

MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
NTR4503NT1G by Onsemi

NTR4503NT1G

Onsemi

NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.
2N7002 by Vishay Siliconix

2N7002

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
BSS123LT3 by Motorola

BSS123LT3

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain Current (ID): .17 A;
FDN302P by Fairchild Semiconductor

FDN302P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 20 V;
BS170_D27Z by Fairchild Semiconductor

BS170_D27Z

Fairchild Semiconductor

BS170_D27Z by Fairchild Semiconductor is a N-CHANNEL small signal FET with a min DS breakdown voltage of 60V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.5A.
ZVP2106ASTZ by Diodes Incorporated

ZVP2106ASTZ

Diodes Incorporated

ZVP2106ASTZ by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.7W at 150°C.
2N7002CK,215 by Nexperia

2N7002CK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.6 ohm; Maximum Feedback Capacitance (Crss): 7.5 pF; Minimum DS Breakdown Voltage: 60 V;
SI2312CDS-T1-GE3 by Vishay Intertechnology

SI2312CDS-T1-GE3

Vishay Intertechnology

SI2312CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 20V DS breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.1W. The small outline package style and dual terminal position make it suitable for surface mount designs.