Infineon Technologies - 2N7621T2

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2N7621T2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2N7621T2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Drain Current (ID): 1.6 A; Package Style (Meter): CYLINDRICAL;
Datasheet 2N7621T2 Datasheet
In Stock472
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.6 A
JEDEC-95 Code: TO-205AF
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 5 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.6 A
Moisture Sensitivity Level (MSL): 1
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