2N7628M1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	2N7628M1
Description	P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 60 V; JEDEC-95 Code: MO-036AB;
Datasheet	2N7628M1 Datasheet
In Stock	70

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.71 A
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	14
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-CDIP-T14
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.25 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	MO-036AB
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.71 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
70	-	-

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