Infineon Technologies - AIGB50N65F5

  1. Home
  2. Infineon Technologies - AIGB50N65F5
AIGB50N65F5 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number AIGB50N65F5
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 305 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSSO-G2;
Datasheet AIGB50N65F5 Datasheet
In Stock448
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Surface Mount: YES
Nominal Turn Off Time (toff): 179 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 305 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 39 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: AEC-Q101
Maximum VCEsat: 2.1 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
448 - -

Popular Products

Category Top Products

BSM150GB120DN2 by Eupec & Kg

BSM150GB120DN2

Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 210 A; Qualification: Not Qualified;
HGTG18N120BND by Harris Semiconductor

HGTG18N120BND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
IXGH16N170A by Littelfuse

IXGH16N170A

Littelfuse

The Littelfuse IXGH16N170A is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 16A. It has a nominal turn-off time of 330ns, making it ideal for motor control applications requiring high power dissipation up to 190W. The package style is flange mount with a rectangular shape and through-hole terminals.
FP10R06W1E3BOMA1 by Infineon Technologies

FP10R06W1E3BOMA1

Infineon Technologies

Infineon Technologies' FP10R06W1E3BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 600V, and max. current of 16A. Ideal for power control applications due to its fast turn on/off times (ton: 26ns, toff: 260ns) and operating temp up to 175°C in a rectangular package style.
CM150TX-24S1 by Mitsubishi Electric

CM150TX-24S1

Mitsubishi Electric

Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.
HGTG11N120CND by Intersil

HGTG11N120CND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
FGH40N65UFDTU_F085 by Fairchild Semiconductor

FGH40N65UFDTU_F085

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;
FS150R12KT3 by Eupec & Kg

FS150R12KT3

Eupec & Kg

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;
IRG7PH35UD-EP by Infineon Technologies

IRG7PH35UD-EP

Infineon Technologies

IRG7PH35UD-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It has a power dissipation of 180W and is designed for power control applications. With a rise time of 30ns and fall time of 105ns, it offers efficient switching performance in through-hole package style.
2MBI200UD-120 by Fuji Electric

2MBI200UD-120

Fuji Electric

Fuji Electric's 2MBI200UD-120 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 300A, and turn off time of 370ns. Ideal for power control applications due to its fast switching capabilities and high voltage handling.
FP15R12W1T4B11BOMA1 by Infineon Technologies

FP15R12W1T4B11BOMA1

Infineon Technologies

Infineon Technologies' FP15R12W1T4B11BOMA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 28A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its fast turn-off time (495ns) and turn-on time (120ns). Package style: FLANGE MOUNT.
IGW50N60TXK by Infineon Technologies

IGW50N60TXK

Infineon Technologies

IGW50N60TXK by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations at up to 175°C.
IRG4BC20UD-SPBF by International Rectifier

IRG4BC20UD-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Case Connection: COLLECTOR;
FS25R12YT3 by Infineon Technologies

FS25R12YT3

Infineon Technologies

Infineon FS25R12YT3 is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 40A, and Pmax of 165W. Ideal for high-power applications like motor drives due to its fast turn-off time (toff) of 640ns and turn-on time (ton) of 120ns in a RECTANGULAR package style.
STGW30NC60WD by STMicroelectronics

STGW30NC60WD

STMicroelectronics

STGW30NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and a turn-off time of 189ns. The package style is flange mount with through-hole terminals.
IRGR4045DPBF by Infineon Technologies

IRGR4045DPBF

Infineon Technologies

IRGR4045DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 77W. It has a single configuration with built-in diode, ideal for power control applications requiring fast switching times (tr: 15ns, tf: 22ns). This surface-mount transistor operates at temperatures up to 175°C.
FB30R06W1E3ENG by Infineon Technologies

FB30R06W1E3ENG

Infineon Technologies

Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.
HGTG18N120BND by Intersil

HGTG18N120BND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 18 A; Maximum Gate-Emitter Voltage: 20 V;
IXGA20N120A3 by IXYS Corporation

IXGA20N120A3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;
IKW50N60H3FKSA1 by Infineon Technologies

IKW50N60H3FKSA1

Infineon Technologies

IKW50N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 297ns toff. Ideal for power control applications due to its single configuration with built-in diode. Operates at a max temperature of 175°C in a rectangular package style.