Infineon Technologies - AUIRF7303Q

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AUIRF7303Q by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRF7303Q
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 2;
Datasheet AUIRF7303Q Datasheet
In Stock973
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.9 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .05 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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