Infineon Technologies - AUIRF7647S2TR

AUIRF7647S2TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRF7647S2TR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): CHIP CARRIER;
Datasheet AUIRF7647S2TR Datasheet
In Stock460
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 5.9 A
Maximum Pulsed Drain Current (IDM): 95 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 41 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .031 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 67 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 24 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
460 $0.319 $146.740

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