Infineon Technologies - AUIRF7732S2TR

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AUIRF7732S2TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRF7732S2TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Terminal Position: BOTTOM; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet AUIRF7732S2TR Datasheet
In Stock304
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 220 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 41 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00695 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 45 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 55 A
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Pricing (USD)

Qty. Unit Price Ext. Price
304 $0.981 $298.224

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