AUIRF7734M2TR by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	AUIRF7734M2TR
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
Datasheet	AUIRF7734M2TR Datasheet
In Stock	585

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17 A
Maximum Pulsed Drain Current (IDM):	288 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	46 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0049 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	56 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	72 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
585	$0.982	$574.470

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