Infineon Technologies - AUIRL7732S2TR

AUIRL7732S2TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRL7732S2TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (Abs) (ID): 58 A; Moisture Sensitivity Level (MSL): 1;
Datasheet AUIRL7732S2TR Datasheet
In Stock218,943
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 230 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 41 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0066 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 124 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 58 A
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