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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | AUIRL7732S2TR |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (Abs) (ID): 58 A; Moisture Sensitivity Level (MSL): 1; |
Datasheet | AUIRL7732S2TR Datasheet |
In Stock | 218,943 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 14 A |
Maximum Pulsed Drain Current (IDM): | 230 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 41 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-XBCC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0066 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 124 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 40 V |
Qualification: | Not Qualified |
Additional Features: | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | 58 A |