Infineon Technologies - BAR50-02V-E6433

  1. Home
  2. Infineon Technologies - BAR50-02V-E6433
BAR50-02V-E6433 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BAR50-02V-E6433
Description PIN DIODE; Surface Mount: YES; Nominal Minority Carrier Lifetime: 1.1 us; Maximum Operating Temperature: 125 Cel; Minimum Breakdown Voltage: 50 V; Reverse Test Voltage: 1 V;
Datasheet BAR50-02V-E6433 Datasheet
In Stock267
NAME DESCRIPTION
Nominal Minority Carrier Lifetime: 1.1 us
Reverse Test Voltage: 1 V
Diode Type: PIN DIODE
Minimum Breakdown Voltage: 50 V
Maximum Operating Temperature: 125 Cel
Sub-Category: PIN Diodes
Surface Mount: YES
Nominal Diode Capacitance: .24 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
267 - -

Popular Products

Category Top Products

MA4P7002F-1072T by M/a-com

MA4P7002F-1072T

M/a-com

PIN DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
APD1510-000 by Alpha Industries

APD1510-000

Alpha Industries

PIN DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
ISS312 by Toshiba

ISS312

Toshiba

PIN DIODE; Terminal Form: THROUGH-HOLE; Surface Mount: NO; Package Shape: RECTANGULAR; Qualification: Not Qualified; Minimum Breakdown Voltage: 30 V;
BXY44P-FPS by Infineon Technologies

BXY44P-FPS

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;
BXY44-TP by Infineon Technologies

BXY44-TP

Infineon Technologies

PIN DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
HSMP-386C-TR2G by Broadcom

HSMP-386C-TR2G

Broadcom

HSMP-386C-TR2G by Broadcom is a PIN diode with 2 elements, 50V reverse test voltage, and 0.2pF capacitance. It is used in attenuators and switches, operating up to 150°C. The diode has a matte tin finish, gull wing terminals, and is surface mountable for various applications.
BAP51-02,115 by NXP Semiconductors

BAP51-02,115

NXP Semiconductors

The NXP Semiconductors BAP51-02,115 is a PIN diode with a max diode capacitance of 0.55 pF and a forward resistance of 2.5 ohm. It operates b/w -65 to 150 °C and has a breakdown voltage of 60 V, making it suitable for RF switches, attenuators, and phase shifters in various applications.
HSMP-3814-TR1G by Broadcom

HSMP-3814-TR1G

Broadcom

HSMP-3814-TR1G by Broadcom is a PIN diode with common cathode, 2 elements, and 0.35 pF max capacitance. It is used in attenuator applications, operates up to 150°C, and has a reverse test voltage of 50V.
MPN3404RLRE by Onsemi

MPN3404RLRE

Onsemi

MPN3404RLRE by Onsemi is a PIN diode with very high frequency band, 2 pF diode capacitance, and 0.85 ohm forward resistance. It is used for switching applications at up to 125 °C operating temperature.
HSMP-389R-BLKG by Broadcom

HSMP-389R-BLKG

Broadcom

HSMP-389R-BLKG by Broadcom is a PIN diode with 2 elements, 0.3 pF capacitance, and 5V reverse test voltage. It is ideal for switching applications due to its small outline package style and dual terminal position. Operating at up to 150°C, it offers low forward resistance of 2.5 ohm and high breakdown voltage of 100V.
JDP2S04E by Toshiba

JDP2S04E

Toshiba

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1SV308,L3F(B by Toshiba

1SV308,L3F(B

Toshiba

PIN DIODE; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BAR63-02V-E6327 by Infineon Technologies

BAR63-02V-E6327

Infineon Technologies

Infineon's BAR63-02V-E6327 is a PIN diode with 5V reverse test voltage, 150°C max operating temp, and 2 ohm forward resistance. Ideal for RF switches, attenuators, and phase shifters in applications requiring high-speed switching and low capacitance.
BAR6503WE6327HTSA1 by Infineon Technologies

BAR6503WE6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
BXY44P-FPP by Infineon Technologies

BXY44P-FPP

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;
BAR8802VH6327XTSA1 by Infineon Technologies

BAR8802VH6327XTSA1

Infineon Technologies

Infineon's BAR8802VH6327XTSA1 is a PIN diode with 0.4 pF capacitance, 2.5 ohm forward resistance, and 80 V breakdown voltage. Ideal for ultra-high frequency switching applications, it operates b/w -55 to 125 °C with a max power dissipation of 0.25 W in a small outline package.
BAQ806/T3 by NXP Semiconductors

BAQ806/T3

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMVL3700T1 by Onsemi

MMVL3700T1

Onsemi

MMVL3700T1 by Onsemi is a PIN diode with a max power dissipation of 0.2W and min breakdown voltage of 200V, suitable for very high frequency applications like switching. It features a single configuration, small outline package style, and gull wing terminal form for surface mount usage at up to 150 °C operating temperature.
BAR64-02LE6327 by Infineon Technologies

BAR64-02LE6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Minority Carrier Lifetime: 1.55 us; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Reverse Test Voltage: 0 V;
BAT1805E6327HTSA1 by Infineon Technologies

BAT1805E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;