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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BAR8802LRHE6327XTSA1 |
| Description | PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | BAR8802LRHE6327XTSA1 Datasheet |
| In Stock | 2,055 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Config: | SINGLE |
| Diode Type: | PIN DIODE |
| Frequency Band: | L BAND |
| Surface Mount: | YES |
| Terminal Finish: | GOLD |
| No. of Terminals: | 2 |
| Terminal Position: | BOTTOM |
| Maximum Diode Capacitance: | .4 pF |
| Package Style (Meter): | CHIP CARRIER |
| Technology: | POSITIVE-INTRINSIC-NEGATIVE |
| JESD-30 Code: | R-XBCC-N2 |
| Minimum Breakdown Voltage: | 80 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Diode Forward Resistance: | 2.5 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
BAR 88-02LRH E6327 BAR 88-02LRH E6327-ND BAR8802LRHE6327XTSA1TR INFINFBAR8802LRHE6327XTSA1 SP000051042 2156-BAR8802LRHE6327XTSA1-ITTR BAR8802LRHE6327XT |
| Nominal Minority Carrier Lifetime: | .5 us |
| JESD-609 Code: | e4 |
| Diode Element Material: | SILICON |
| Maximum Power Dissipation: | .25 W |
| Additional Features: | LOW DISTORTION |
| Application: | SWITCHING |
