Infineon Technologies - BB304

  1. Home
  2. Infineon Technologies - BB304
BB304 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BB304
Description VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 48 pF; JESD-609 Code: e0; Minimum Quality Factor: 100;
Datasheet BB304 Datasheet
In Stock155
NAME DESCRIPTION
Minimum Quality Factor: 100
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 30 V
Sub-Category: Varactors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Nominal Diode Capacitance: 48 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
155 - -

Popular Products

Category Top Products

BB135-T by NXP Semiconductors

BB135-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX584D by Texas Instruments

MDX584D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 45; Nominal Diode Capacitance: .1 pF;
BB901-T by NXP Semiconductors

BB901-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
KVX2162-23-0 by Microchip Technology

KVX2162-23-0

Microchip Technology

KVX2162-23-0 by Microchip: Varactor diode with 10pF capacitance, 22V breakdown voltage, and 400 min quality factor. Ideal for VHF to L band applications due to hyperabrupt classification. Operates b/w -55°C to 125°C, surface mountable in plastic/epoxy package.
BB202,115 by NXP Semiconductors

BB202,115

NXP Semiconductors

BB202,115 by NXP Semiconductors is a varactor diode with a max operating temperature of 85°C and min of -55°C. It has a diode type of variable capacitance with a max repetitive peak reverse voltage of 6V. This diode is commonly used in applications requiring precise tuning capabilities in electronic circuits.
MV209RLRP by Onsemi

MV209RLRP

Onsemi

The Onsemi MV209RLRP is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this single-configured diode has a max power dissipation of 0.2 W. Its through-hole terminal form and silicon element material make it suitable for various RF tuning circuits.
1N5474 by Onsemi

1N5474

Onsemi

1N5474 by Onsemi is a varactor diode with 68pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.
BB804W212 by NXP Semiconductors

BB804W212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB809143 by NXP Semiconductors

BB809143

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB809T/R by NXP Semiconductors

BB809T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC384T by Onsemi

SVC384T

Onsemi

The Onsemi SVC384T is a Varactor Diode with 2 elements, common cathode config, and 33V breakdown voltage. It has a min quality factor of 200 and operates up to 125 °C. Ideal for applications requiring variable capacitance diodes in electronic circuits.
1N5452 by Onsemi

1N5452

Onsemi

1N5452 by Onsemi is a Varactor Diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 250 and low reverse current of 0.00000002uA.
BB178LXT/R by NXP Semiconductors

BB178LXT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V;
MMVL2105T1G by Onsemi

MMVL2105T1G

Onsemi

MMVL2105T1G by Onsemi is a varactor diode with 15pF nominal capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for RF tuning applications due to its variable capacitance feature in a small outline package.
BB119133 by NXP Semiconductors

BB119133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BBY39,215 by NXP Semiconductors

BBY39,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
934057931135 by NXP Semiconductors

934057931135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
SVC236-TB-E by Onsemi

SVC236-TB-E

Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
SVC346 by Onsemi

SVC346

Onsemi

The Onsemi SVC346 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 64 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 33 V and is designed for variable capacitance needs.
BB182 by NXP Semiconductors

BB182

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;