Infineon Technologies - BB505B

  1. Home
  2. Infineon Technologies - BB505B
BB505B by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BB505B
Description VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; Nominal Diode Capacitance: 18 pF; Maximum Repetitive Peak Reverse Voltage: 28 V;
Datasheet BB505B Datasheet
In Stock50
NAME DESCRIPTION
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 28 V
Maximum Operating Temperature: 150 Cel
Sub-Category: Varactors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Nominal Diode Capacitance: 18 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
50 - -

Popular Products

Category Top Products

BB131,135 by NXP Semiconductors

BB131,135

NXP Semiconductors

NXP Semiconductors' BB131,135 Varactor Diodes are surface mountable with a nominal capacitance of 12pF. These diodes have a max reverse voltage of 30V and can withstand peak reflow temp of 260°C for up to 30s. Ideal for applications requiring variable capacitance like RF tuning circuits.
BB804WT/R by NXP Semiconductors

BB804WT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
934050110135 by NXP Semiconductors

934050110135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB910-AMMOPAK by NXP Semiconductors

BB910-AMMOPAK

NXP Semiconductors

BB910-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high to ultra-high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a min breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.
MDX585C by Texas Instruments

MDX585C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;
SVC211SPA by Onsemi

SVC211SPA

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 42 pF; Minimum Quality Factor: 100;
SVC354T by Onsemi

SVC354T

Onsemi

The Onsemi SVC354T is a Varactor Diode with a Min Quality Factor of 200, Breakdown Voltage of 16V, and Capacitance Ratio of 17.5. It is used in RF applications for frequency tuning due to its Variable Capacitance property and small outline package style.
SVC371 by Onsemi

SVC371

Onsemi

The Onsemi SVC371 is a Varactor Diode with 500 pF capacitance, 16 V breakdown voltage, and 200 min quality factor. It is used in RF applications for frequency tuning due to its variable capacitance diode type and high-quality factor. The diode's small outline package with gull wing terminals makes it suitable for surface mount designs.
BB202/T3 by NXP Semiconductors

BB202/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V;
BB154T/R by NXP Semiconductors

BB154T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
933815170215 by NXP Semiconductors

933815170215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5475 by Onsemi

1N5475

Onsemi

1N5475 by Onsemi is a varactor diode with 82pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.
BBY40-T by NXP Semiconductors

BBY40-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX581C by Texas Instruments

MDX581C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 25;
BA682 by Telefunken Microelectronics

BA682

Telefunken Microelectronics

Varactors;
SVC321A by Onsemi

SVC321A

Onsemi

The Onsemi SVC321A is a varactor diode with a min quality factor of 200, ideal for RF applications. Featuring a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C. Its single configuration and variable capacitance make it suitable for tuning circuits in electronic devices.
MV209RLRM by Onsemi

MV209RLRM

Onsemi

MV209RLRM by Onsemi is a Varactor Diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for Very High Frequency applications due to its variable capacitance diode type and max operating temperature of 125 °C.
1SV279,H3F by Toshiba

1SV279,H3F

Toshiba

VARIABLE CAPACITANCE DIODE;
BB619-T by NXP Semiconductors

BB619-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB208-02,135 by NXP Semiconductors

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;