Infineon Technologies - BB555-H7912

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;

1N5701 by Onsemi is a varactor diode with 375 min quality factor, 18 pF nominal capacitance, and -65 to 175 °C operating temp. It's used in RF applications for voltage-controlled oscillators due to its abrupt variable capacitance classification.

BB202,115 by NXP Semiconductors is a varactor diode with a max operating temperature of 85°C and min of -55°C. It has a diode type of variable capacitance with a max repetitive peak reverse voltage of 6V. This diode is commonly used in applications requiring precise tuning capabilities in electronic circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 2000; Maximum Repetitive Peak Reverse Voltage: 22 V; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi SVC354 is a Varactor Diode with 52pF nominal capacitance, 16V breakdown voltage, and 200 min quality factor. It is used in applications requiring variable capacitance diodes for RF tuning circuits.

1N5443 by Onsemi is a varactor diode with 10pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 400 and low reverse current of 0.00000002uA.

BBY5502VH6327XTSA1 by Infineon is a single hyperabrupt varactor diode with 18.6pF capacitance, 16V breakdown voltage, and -55 to 150°C operating range. Ideal for applications requiring variable capacitance in small outline packages.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 2.7 pF; Maximum Repetitive Peak Reverse Voltage: 22 V; Minimum Quality Factor: 2000;

BB171X by NXP Semiconductors is a single-config varactor diode with an abrupt variable capacitance classification. It operates in the very high frequency band and has a max reverse current of 0.01 uA. This diode is commonly used in applications requiring small outline packages and high operating temperatures up to 125 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V;

Toshiba's 1SV229(TPH3,F) is a single varactor diode with abrupt capacitance classification. Operating at ultra-high frequency, it has a nominal capacitance of 15 pF and min breakdown voltage of 15 V. Ideal for applications requiring precise variable capacitance in small outline packages.

TIV24 by Texas Instruments is a single varactor diode with a min quality factor of 80, ideal for very high frequency applications. Featuring a nominal capacitance of 28 pF and max power dissipation of 0.25 W, it offers a breakdown voltage of 30 V. The diode's silicon element material and variable capacitance make it suitable for RF tuning circuits in communication systems.