Infineon Technologies - BB644E7908

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMVL105GT1 by Onsemi is a varactor diode with 2.15pF nominal capacitance, 30V breakdown voltage, and 0.2W power dissipation. It is ideal for RF applications due to its variable capacitance nature and small outline package style. The diode's gull wing terminal form and tin/lead finish make it suitable for surface mount designs in electronic circuits.

1N4798 by Onsemi is a varactor diode with 68pF capacitance, 15V reverse voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 25;

The NXP 934042930115 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact design ensures efficient surface mount integration.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LV2205RL by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for applications requiring variable capacitance diodes in temperatures up to 150 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;

MV104RL1 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 39.5 pF nominal capacitance. It operates at up to 125 °C and has a min breakdown voltage of 32V. Ideal for applications requiring variable capacitance diodes in cylindrical packages.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

Varactors;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.

MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.