Infineon Technologies - BB659-02V

MV209RLRM by Onsemi is a Varactor Diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for Very High Frequency applications due to its variable capacitance diode type and max operating temperature of 125 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); Diode Element Material: SILICON;

MMBV2101LT1G by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. Ideal for high frequency to ultra-high frequency applications due to its abrupt variable capacitance diode classification. It comes in a small outline package with gull wing terminals for surface mount assembly.

SMV1232-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 2.6pF capacitance, 15V breakdown voltage, and -55 to 175°C operating range. Ideal for S band applications, this surface-mount chip carrier diode offers precise tuning in RF circuits.

The Onsemi MV1648 is a single varactor diode with 82pF nominal capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 16 pF; Terminal Finish: Tin (Sn);

The Toshiba 1SV204 is a single varactor diode with a max reverse current of 0.01 uA and min breakdown voltage of 30 V. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. The diode's silicon element material and flat terminal form enhance its performance up to an operating temperature of 125 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 27 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5692 by Onsemi is a Varactor Diode with 56pF capacitance, 45V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

BB804-0 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C, making it ideal for RF tuning circuits. Its compact surface mount design ensures efficient space utilization in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBV609LT1G by Onsemi is a Varactor Diode with 29pF nominal capacitance, 20V breakdown voltage, and 250 min quality factor. It is ideal for Very High Frequency applications due to its Hyperabrupt diode classification and common cathode configuration. The diode's small outline package and gull wing terminal form make it suitable for surface mount designs requiring high-frequency performance.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 12 V; Nominal Diode Capacitance: .9 pF; Minimum Quality Factor: 200;

1N5708 by Onsemi is a varactor diode with 175 min quality factor, 68 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp range: -65 to 175 °C.