Infineon Technologies - BB669E7906

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 9 V; Nominal Diode Capacitance: 39 pF; Terminal Finish: Tin/Lead (Sn/Pb);

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

The Onsemi 1N5444 Varactor Diode has a Min Quality Factor of 400, Max Reverse Current of 0.02uA, and Nominal Diode Capacitance of 12pF. It is used in RF applications for tuning circuits due to its Variable Capacitance Diode Classification as ABRUPT.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BB215TRL by NXP Semiconductors is a single, surface-mount variable capacitance diode designed for ultra-high frequency applications. It features a min capacitance ratio of 7.6 and an isolated case connection. Ideal for RF tuning and signal processing in compact devices.

1N5683 by Onsemi is a varactor diode with 10pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.00000002uA and high breakdown voltage of 45V.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BB199 by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a nominal capacitance of 39.5 pF, operates b/w -65 °C to 150 °C, and has a max power dissipation of 0.3 W. Its compact design ensures efficient surface mounting in various circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5702 by Onsemi is a varactor diode with 375 min quality factor, 22 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

BB181,115 by NXP Semiconductors is a varactor diode with a max operating temperature of 125°C and a min of -55°C. It has a very high frequency band and a max repetitive peak reverse voltage of 30V. This diode is used in applications requiring variable capacitance at small outline packages.

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 42 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Minimum Quality Factor: 100;

BB640E6327HTSA1 by Infineon Technologies is a varactor diode with a min capacitance ratio of 19.5, ideal for frequency tuning applications. It features a small outline package shape, gull wing terminal form, and dual terminals for surface mount configurations. The diode element material is silicon with tin terminal finish in a plastic/epoxy body material.

MV104G by Onsemi is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and max power dissipation of 0.28 W. Ideal for applications requiring precise voltage control in RF circuits.

BB804-1 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C. This surface-mount, dual-element diode is ideal for tuning circuits.

SVC203SPA by Onsemi is a Varactor Diode with 2 elements, common cathode config, and min quality factor of 60. It has a diode capacitance ratio of 2.1924, breakdown voltage of 16V, and max power dissipation of 0.1W. Ideal for applications requiring variable capacitance diodes in plastic/epoxy package style with through-hole terminals.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;