Infineon Technologies - BBY26S1

Infineon's BBY5802VH6327XTSA1 is a single hyperabrupt varactor diode with 18.3 pF capacitance, 10 V breakdown voltage, and -55 to 150°C operating range. Ideal for applications requiring variable capacitance in small outline packages like RF tuning circuits.

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

MV2109RLRE by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance in electronic circuits, such as tuning RF filters or oscillators.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BB119-AMMOPAK by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a max reverse current of 2 µA, operates up to 200 °C, and has a reverse test voltage of 15 V. Its isolated case connection ensures reliable performance in various circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

VARIABLE CAPACITANCE DIODE;

SMV1255-079LF by Skyworks: Varactor diode with 64pF capacitance, 15V breakdown voltage, and -55 to 125°C operating temp. Ideal for RF applications due to hyperabrupt diode classification and small outline package.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

1N5447 by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 20 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

MMVL3102T1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it suitable for small outline packages in RF circuits. With gull wing terminals and tin/lead finish, this diode offers precise variable capacitance control.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 15;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V;