Infineon Technologies - BBY5102WH6327XTSA1

  1. Home
  2. Infineon Technologies - BBY5102WH6327XTSA1
BBY5102WH6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY5102WH6327XTSA1
Description VARIABLE CAPACITANCE DIODE;
Datasheet BBY5102WH6327XTSA1 Datasheet
In Stock123
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
123 - -

Popular Products

Category Top Products

1N4811 by Onsemi

1N4811

Onsemi

1N4811 by Onsemi is a varactor diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 55V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.000000005uA.
BB909B153 by NXP Semiconductors

BB909B153

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC389-TL-E by Onsemi

SVC389-TL-E

Onsemi

SVC389-TL-E by Onsemi is a Varactor Diode with 2 elements, HYPERABRUPT classification, and 497.5 pF nominal capacitance. It operates in medium frequency bands, has a common cathode configuration, and is suitable for applications requiring variable capacitance diodes in small outline packages.
SVC203SPA by Onsemi

SVC203SPA

Onsemi

SVC203SPA by Onsemi is a Varactor Diode with 2 elements, common cathode config, and min quality factor of 60. It has a diode capacitance ratio of 2.1924, breakdown voltage of 16V, and max power dissipation of 0.1W. Ideal for applications requiring variable capacitance diodes in plastic/epoxy package style with through-hole terminals.
1N5703 by Onsemi

1N5703

Onsemi

1N5703 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 65V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 350 and low reverse current of 0.00000002uA.
BBY42TRL13 by NXP Semiconductors

BBY42TRL13

NXP Semiconductors

BBY42TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.
BBY40212 by NXP Semiconductors

BBY40212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB809136 by NXP Semiconductors

BB809136

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB179,335 by NXP Semiconductors

BB179,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;
SMV1405-040LF by Skyworks Solutions

SMV1405-040LF

Skyworks Solutions

SMV1405-040LF by Skyworks Solutions is a single varactor diode with abrupt capacitance classification. Operating in S band, it has a nominal capacitance of 1.305 pF and breakdown voltage of 30 V. Ideal for applications requiring variable capacitance diodes in temperature range -55 to 175°C.
LV2209ZL1 by Onsemi

LV2209ZL1

Onsemi

LV2209ZL1 by Onsemi is a single varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 25V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.
BB804W by NXP Semiconductors

BB804W

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB249TRL13 by NXP Semiconductors

BB249TRL13

NXP Semiconductors

BB249TRL13 from NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.
TIV25 by Texas Instruments

TIV25

Texas Instruments

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.
MDX598C by Texas Instruments

MDX598C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 25;
BB189,335 by NXP Semiconductors

BB189,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 14.95 pF;
1N4801 by Onsemi

1N4801

Onsemi

1N4801 by Onsemi is a varactor diode with 6.8 pF capacitance, 100 V reverse voltage, and 0.005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.
BB909A153 by NXP Semiconductors

BB909A153

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB640E6327HTSA1 by Infineon Technologies

BB640E6327HTSA1

Infineon Technologies

BB640E6327HTSA1 by Infineon Technologies is a varactor diode with a min capacitance ratio of 19.5, ideal for frequency tuning applications. It features a small outline package shape, gull wing terminal form, and dual terminals for surface mount configurations. The diode element material is silicon with tin terminal finish in a plastic/epoxy body material.
BB204B-TAPE-REEL by NXP Semiconductors

BB204B-TAPE-REEL

NXP Semiconductors

BB204B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 2.5 and comes in a cylindrical plastic/epoxy package. Ideal for RF tuning applications, it ensures reliable performance in compact designs.