Infineon Technologies - BBY52-02L-E6327

1N4805 by Onsemi is a varactor diode with 15 pF nominal capacitance, 110 V breakdown voltage, and 0.000000005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF; Minimum Quality Factor: 10;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .225 pF;

1N5707 by Onsemi is a varactor diode with a min quality factor of 225, max reverse current of 0.00000002 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits due to its abrupt classification and breakdown voltage of 65 V.

MV2101RLRP by Onsemi is a varactor diode with a min quality factor of 450, nominal capacitance of 6.8 pF, and a breakdown voltage of 30 V. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures up to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 2.7 pF; Maximum Repetitive Peak Reverse Voltage: 22 V; Minimum Quality Factor: 2000;

The Toshiba 1SV290 is a varactor diode with a max reverse current of 0.01 uA and a min breakdown voltage of 30 V. Its nominal capacitance is 45.25 pF, making it ideal for applications requiring variable capacitance such as in RF tuning circuits or frequency modulators. The diode's small outline package and surface mount capability make it suitable for compact electronic devices operating at temperatures up to 125°C.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Infineon's BB844E6327HTSA1 is a varactor diode with common cathode, 2 elements, and very high frequency band. It has a capacitance of 43.75 pF, breakdown voltage of 18 V, and operates b/w -55 to 150°C. Ideal for applications requiring variable capacitance in small outline packages like RF tuning circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF;

1N4789 by Onsemi is a varactor diode with max reverse current of 0.005 uA and nominal capacitance of 12 pF. It has a breakdown voltage of 28 V, making it ideal for RF tuning applications in temperature range -65 to 150 °C.

1N4802 by Onsemi is a Varactor Diode with 8.2 pF capacitance, 110 V breakdown voltage, and 0.5 W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;

The Onsemi MV209RLRP is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this single-configured diode has a max power dissipation of 0.2 W. Its through-hole terminal form and silicon element material make it suitable for various RF tuning circuits.

BB219TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5456A by Onsemi is a varactor diode with 175 min. quality factor, 100 pF nominal capacitance, and 30 V min. breakdown voltage. Ideal for ultra-high frequency applications due to its abrupt variable capacitance classification. Package: Glass, Config: Single, Terminals: 2.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N5705 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 65V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 325 and low reverse current of 0.00000002uA.