Infineon Technologies - BBY5303LRHE6817XTMA1

  1. Home
  2. Infineon Technologies - BBY5303LRHE6817XTMA1
BBY5303LRHE6817XTMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY5303LRHE6817XTMA1
Description VARIABLE CAPACITANCE DIODE;
Datasheet BBY5303LRHE6817XTMA1 Datasheet
In Stock508
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
508 - -

Popular Products

Category Top Products

BBY42-T by NXP Semiconductors

BBY42-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BBY40,215 by NXP Semiconductors

BBY40,215

NXP Semiconductors

BBY40,215 by NXP Semiconductors is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 26 pF. It operates in the very high frequency band and has a min breakdown voltage of 30 V. This diode is ideal for applications requiring variable capacitance in small outline packages.
BBY40TRL by NXP Semiconductors

BBY40TRL

NXP Semiconductors

BBY40TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and signal processing tasks.
934067721115 by NXP Semiconductors

934067721115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
BB159T/R by NXP Semiconductors

BB159T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB814E6327GR1HTSA1 by Infineon Technologies

BB814E6327GR1HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
MDX593C by Texas Instruments

MDX593C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
BB182,315 by NXP Semiconductors

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;
BB219TRL13 by NXP Semiconductors

BB219TRL13

NXP Semiconductors

BB219TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.
1N4810 by Onsemi

1N4810

Onsemi

1N4810 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 61V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 15 and low reverse current of 0.005uA.
MV2109RLRP by Onsemi

MV2109RLRP

Onsemi

MV2109RLRP by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it ideal for RF tuning circuits in communication systems.
BB153 by NXP Semiconductors

BB153

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVD101 by Onsemi

SVD101

Onsemi

SVD101 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.3 pF, it has a min breakdown voltage of 27 V and max power dissipation of 0.2 W, making it suitable for microwave circuits requiring precise tuning capabilities.
BB175X by NXP Semiconductors

BB175X

NXP Semiconductors

The NXP Semiconductors BB175X is a varactor diode with a max repetitive peak reverse voltage of 32V. It features surface mount capability and terminal finish in TIN. Ideal for applications requiring variable capacitance diodes, it can withstand peak reflow temperatures up to 260°C for 30s.
MMVL409T1 by Onsemi

MMVL409T1

Onsemi

MMVL409T1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and operates at a max power dissipation of 0.2 W. This single-configured diode in small outline package is ideal for RF tuning circuits.
MDX594C by Texas Instruments

MDX594C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
MV1401 by Crystalonics

MV1401

Crystalonics

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC321SPAC by Onsemi

SVC321SPAC

Onsemi

The Onsemi SVC321SPAC is a single varactor diode with a min quality factor of 200 and a max reverse current of 0.1 uA. It has a package style of in-line and is ideal for applications requiring variable capacitance diodes, such as RF tuning circuits in electronic devices.
MMBV809LT3 by Onsemi

MMBV809LT3

Onsemi

MMBV809LT3 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. With a nominal capacitance of 5.3 pF and a breakdown voltage of 20 V, this small outline diode in a rectangular package is suitable for surface mount designs requiring precise tuning capabilities.
SVD201 by Onsemi

SVD201

Onsemi

The Onsemi SVD201 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.9 pF, it has a min breakdown voltage of 27 V and operates at temperatures up to 150 °C. This surface-mount diode in microwave package style is made of gallium arsenide and offers a max power dissipation of 0.2 W.