Infineon Technologies - BBY5303LRHE6817XTMA1

  1. Home
  2. Infineon Technologies - BBY5303LRHE6817XTMA1
BBY5303LRHE6817XTMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY5303LRHE6817XTMA1
Description VARIABLE CAPACITANCE DIODE;
Datasheet BBY5303LRHE6817XTMA1 Datasheet
In Stock508
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
508 - -

Popular Products

Category Top Products

1N5708 by Onsemi

1N5708

Onsemi

1N5708 by Onsemi is a varactor diode with 175 min quality factor, 68 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp range: -65 to 175 °C.
BB135/A2,135 by NXP Semiconductors

BB135/A2,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 19.25 pF;
BB200T/R by NXP Semiconductors

BB200T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
934040040135 by NXP Semiconductors

934040040135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX592C by Texas Instruments

MDX592C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 25;
1N5453 by Onsemi

1N5453

Onsemi

1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
MMBV2108L by Onsemi

MMBV2108L

Onsemi

MMBV2108L by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.
BB157/TM by NXP Semiconductors

BB157/TM

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX596N by Texas Instruments

MDX596N

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;
LV2205ZL1 by Onsemi

LV2205ZL1

Onsemi

LV2205ZL1 by Onsemi is a single varactor diode with a min quality factor of 400, ideal for applications requiring variable capacitance. With a nominal capacitance of 15 pF and a breakdown voltage of 25 V, this cylindrical diode can operate at temperatures up to 150 °C, making it suitable for high-performance electronic circuits.
MV209G by Onsemi

MV209G

Onsemi

MV209G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. Featuring a nominal capacitance of 29 pF and a breakdown voltage of 30 V, this cylindrical diode in plastic/epoxy package is designed for through-hole mounting with tin silver copper finish.
1SV285 by Toshiba

1SV285

Toshiba

Toshiba's 1SV285 Varactor Diode is a single-config, ultra-high frequency diode with a capacitance ratio of 2 and nominal capacitance of 4.45 pF. Ideal for applications requiring variable capacitance, such as in RF tuning circuits for small outline packages operating up to 125°C.
MDX590M by Texas Instruments

MDX590M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;
SMV1213-079LF by Skyworks Solutions

SMV1213-079LF

Skyworks Solutions

SMV1213-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 22pF nominal capacitance, 12V breakdown voltage, and 0.25W power dissipation. It is used in applications requiring variable capacitance control in RF circuits for signal tuning and filtering.
BB134T/R by NXP Semiconductors

BB134T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
KVX2162-23-0/TR by Microchip Technology

KVX2162-23-0/TR

Microchip Technology

KVX2162-23-0/TR by Microchip: Varactor Diode with 10pF capacitance, 22V breakdown voltage, and 400 min quality factor. Ideal for VHF to L band applications due to hyperabrupt diode classification. Operates b/w -55°C to 125°C, suitable for surface mount designs.
BB153 by NXP Semiconductors

BB153

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB178T/R by NXP Semiconductors

BB178T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV209 by Onsemi

MV209

Onsemi

The Onsemi MV209 is a single hyperabrupt varactor diode with a nominal capacitance of 29 pF and a min breakdown voltage of 30 V. It is designed for very high frequency applications, offering a quality factor of 200 and max power dissipation of 0.2 W in a cylindrical package with tin/lead terminals.
1N5689 by Onsemi

1N5689

Onsemi

1N5689 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 40V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor and low reverse current of 0.00000002uA.