Infineon Technologies - BBY58-06W-E6327

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 20;

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SVC720 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 24.15 pF nominal capacitance. It operates at a max temp of 150 °C and has a min breakdown voltage of 16V. Ideal for applications requiring variable capacitance diodes in surface mount packages.

1N5451 by Onsemi is a Varactor Diode with 39pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BBY42TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5448ARL by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Nominal Capacitance of 22 pF, and Breakdown Voltage of 30 V. Ideal for Ultra High Frequency applications due to its Abrupt Variable Capacitance Diode Classification and 0.4 W Power Dissipation capability.

SVC381-TL-E by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and Nominal Capacitance of 427.5 pF. Commonly used in RF applications due to its Variable Capacitance and Breakdown Voltage of 16V, it features a Small Outline package for surface mount assembly at temperatures up to 125 °C.

Infineon's BB844E6327HTSA1 is a varactor diode with common cathode, 2 elements, and very high frequency band. It has a capacitance of 43.75 pF, breakdown voltage of 18 V, and operates b/w -55 to 150°C. Ideal for applications requiring variable capacitance in small outline packages like RF tuning circuits.

BB909B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated axial terminals ensure reliable performance.

BB809-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; JESD-609 Code: e0; Nominal Diode Capacitance: 460 pF; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 15 V;

1N4801 by Onsemi is a varactor diode with 6.8 pF capacitance, 100 V reverse voltage, and 0.005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.