Infineon Technologies - BC857SH6433XTMA1

MMBT3904LT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package with gull wing terminals makes it suitable for surface mount designs.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

SBC846ALT1G by Onsemi is a NPN BJT with VCEsat of 0.6V, hFE of 110, and fT of 100MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and max operating temp of 150°C.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: R-PDSO-G3;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

BC807-40W,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. With a VCEsat of 0.7V and hFE of 250, it can handle up to 0.5A collector current. Operating at a max temperature of 150°C, this transistor has a transition frequency of 80MHz making it suitable for high-speed switching circuits.

BC857C,215 by NXP Semiconductors is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.65V and a min DC current gain (hFE) of 420. It is commonly used for switching applications due to its surface mount capability and max collector-emitter voltage of 45V.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

MBT3904DW1T1G by Onsemi is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 300MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 250 ns;