BC858AE6433 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BC858AE6433
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;
Datasheet	BC858AE6433 Datasheet
In Stock	719

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	125
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.33 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
719	-	-

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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