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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BCR198S-E6327 |
Description | PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; |
Datasheet | BCR198S-E6327 Datasheet |
In Stock | 705 |
NAME | DESCRIPTION |
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Nominal Transition Frequency (fT): | 190 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .07 A |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Sub-Category: | BIP General Purpose Small Signal |
Polarity or Channel Type: | PNP |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 70 |
No. of Terminals: | 6 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | .25 W |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
Peak Reflow Temperature (C): | 260 |
Moisture Sensitivity Level (MSL): | 1 |