Infineon Technologies - BCR35PNE6433HTMA1

  1. Home
  2. Infineon Technologies - BCR35PNE6433HTMA1
BCR35PNE6433HTMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCR35PNE6433HTMA1
Description Small Signal Bipolar Transistors;
Datasheet BCR35PNE6433HTMA1 Datasheet
In Stock399
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
399 - -

Popular Products

Category Top Products

2N3904 by New Jersey Semiconductor Products

2N3904

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; Transistor Element Material: SILICON;
MMBT3904 by Lite-on Semiconductor

MMBT3904

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
MMBT3906 by Zowie Technology

MMBT3906

Zowie Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
MMBT3904 by Nte Electronics

MMBT3904

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
MMBT2222A by Nte Electronics

MMBT2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
2N2907A by Microchip Technology

2N2907A

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; No. of Elements: 1;
MMBT3906 by Jiangsu Changjiang Electronics Technology

MMBT3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
2N3904BU by Onsemi

2N3904BU

Onsemi

The Onsemi 2N3904BU is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Its through-hole package makes it suitable for various electronic circuits.
BC847B,235 by Nexperia

BC847B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC817-25,235 by NXP Semiconductors

BC817-25,235

NXP Semiconductors

NXP Semiconductors' BC817-25,235 is a NPN BJT transistor with max VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BC847BM,315 by Nexperia

BC847BM,315

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
2N3904 by STMicroelectronics

2N3904

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
ULN2803AFWG(O,ELM) by Toshiba

ULN2803AFWG(O,ELM)

Toshiba

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BC547C by NXP Semiconductors

BC547C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Infineon Technologies

MMBT2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
SMMBT5401LT1G by Onsemi

SMMBT5401LT1G

Onsemi

SMMBT5401LT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 150V. Ideal for small outline packages, it operates at up to 150°C and has a nominal transition frequency of 100MHz, making it suitable for high-speed applications in automotive electronics.
2N2905A by Electronic Transistors

2N2905A

Electronic Transistors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846A,215 by Nexperia

BC846A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;