Infineon Technologies - BCX69-10E6433

  1. Home
  2. Infineon Technologies - BCX69-10E6433
BCX69-10E6433 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCX69-10E6433
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
Datasheet BCX69-10E6433 Datasheet
In Stock251
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 85
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1 W
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
251 - -

Popular Products

Category Top Products

BC817-40 by Continental Device India

BC817-40

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC807-40LT1G by Onsemi

BC807-40LT1G

Onsemi

BC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for small outline packages in high-speed circuits.
BC846BDW1T1G by Onsemi

BC846BDW1T1G

Onsemi

BC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, DC current gain of 200, and operates up to 150°C. This small outline transistor in gull wing package offers high performance in compact designs.
MMBT3904 by Rochester Electronics

MMBT3904

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC817-40,235 by Nexperia

BC817-40,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
MMBT2907A by Lite-on Semiconductor

MMBT2907A

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JESD-30 Code: R-PDSO-G3;
MMBT3906 by General Semiconductor

MMBT3906

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;
MMBT2222A by Changzhou Galaxy Century Microelectronics

MMBT2222A

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Peak Reflow Temperature (C): NOT SPECIFIED;
MMBT2222ALP4-7B by Diodes Incorporated

MMBT2222ALP4-7B

Diodes Incorporated

Diodes Inc.'s MMBT2222ALP4-7B is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp. Package: PLASTIC/EPOXY CHIP CARRIER with NO LEAD terminals.
2N2222AUBC by Microsemi

2N2222AUBC

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
2N3904TAR by Onsemi

2N3904TAR

Onsemi

2N3904TAR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Package style is cylindrical with through-hole terminals.
BC547B by Continental Device India

BC547B

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846BPN,115 by NXP Semiconductors

BC846BPN,115

NXP Semiconductors

NXP Semiconductors' BC846BPN,115 is a Small Signal BJT with NPN and PNP types. It has 2 elements for switching applications, with max power dissipation of 0.3W. Operating at up to 150°C, it features a collector-emitter voltage of 65V and transition frequency of 100MHz in a small outline package.
2N2219A by International Devices

2N2219A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847CDW1T1G by Onsemi

BC847CDW1T1G

Onsemi

BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.
BC856B,215 by NXP Semiconductors

BC856B,215

NXP Semiconductors

BC856B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs.
BC817-40 by Itt Semiconductor

BC817-40

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;
MMBT3904WT1G by Onsemi

MMBT3904WT1G

Onsemi

MMBT3904WT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for amplifier applications, it has a small outline package and operates b/w -55°C to 150°C. With a DC current gain of at least 30, this transistor offers fast switching times for efficient performance.
JANTX2N2907AUATR by Microchip Technology

JANTX2N2907AUATR

Microchip Technology

Small Signal Bipolar Transistors; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);